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Name: |
ZENG Zhongming 曾中明 |
Department: |
Nanofabrication Facility |
Position: |
Professor |
Expertise: |
Spintronics; Nanofabrication process; Microwave oscillators; |
Email: |
zmzeng2012@sinano.ac.cn |
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Research Interest: |
- Spintronics;
- Nanofabrication process;
- Microwave oscillators;
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Experience: |
Employment
Jan. 2012 - Present
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Professor
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Nanofabrication Facility, SINANO, CAS
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Oct. 2009-Dec.2011
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Postdoctoral Research Fellow
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Department of Physics and Astronomy, University of California, Los Angeles
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Apr. 2007-Sep. 2009
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Postdoctoral Research Fellow
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Advanced Materials Research Institute, University of New Orleans
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Sep. 2006-Mar. 2007
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Special Researcher
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National Institute of Advanced Industrial Science and Technology, Tsukuba, Japan
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Education
Ph.D. 2006
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Institute of Physics
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CAS
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M.S. 2003
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Materials Science and Engineering
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Central Southern University
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B.S. 2000
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Materials Science and Engineering
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Central Southern University
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Selected Publication: |
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Z. M. Zeng, P. Upadhyaya, P. Khalili Amiri, J. A. Katine, J. Langer, K. L. Wang, and H. W. Jiang, Enhancement of microwave emission in magnetic tunnel junction oscillators through in-plane field orientation, Applied Physics Letters 99, 032503 (2011).
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Z. M. Zeng, P. K. Amiri, G. Rowlands, H. Zhao, I. N. Krivorotov, J. P. Wang, J. A. Katine, J. Langer, K. Galatsis, K. L. Wang, and H. W. Jiang, Effect of resistance-area product on spin-transfer switching in MgO-based magnetic tunnel junction memory cells, Applied Physics Letters 98, 072512 (2011).
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P. K. Amiri, Z. M. Zeng, J. Langer, H. Zhao, G. Rowlands, Y. J. Chen, I. N. Krivorotov, J.-P. Wang, H. W. Jiang, J. A. Katine, Y. Huai, K. Galatsis, and K. L. Wang, Switching Current Reduction Using Perpendicular Anisotropy in CoFeB-MgO Magnetic Tunnel Junctions, Applied Physics Letters 98, 1125071 (2011).
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P. K. Amiri, Z. M. Zeng, P. Upadhyaya, G. Rowlands, H. Zhao, I. N. Krivorotov, J. P. Wang, H. W. Jiang, J. A. Katine, J. Langer, K. Galatsis, and K. L. Wang, Low Write-Energy Magnetic Tunnel Junctions for High-Speed Spin-Transfer-Torque MRAM, IEEE Electron Device Letters 32, 57 (2011).
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Z. M. Zeng, K. H. Cheung, H. W. Jiang, I. N. Krivorotov, J. A. Katine, V. Tiberkevich and A. Slavin, Evolution of spin-wave modes in magnetic tunnel junction nanopillars, Physical Review B 82, 100410 (R) (2010).
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Z. M. Zeng, K. Wang, Z. X. Zhang, J. J. Chen, and W. L. Zhou, Detection of H2S at room temperature by using individual indium oxide nanowire transistor, Nanotechnology 20, 045503(2009).
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Z. M. Zeng, Y. Li, J. J. Chen, and W. L. Zhou, Core-shell GaP/GaOx Nanowires and nanochains and their transport properties, Journal of Physical Chemistry C 112, 18588 (2008).
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Y. Wang, Z. M. Zeng, X. F. Han, X. G. Zhang, X. C. Sun, and Z. Zhang, Temperature-dependent Mn-diffusion modes in CoFeB- and CoFe-based magnetic tunnel junction: Electron-microscopy studies, Physical Review B 75, 214424 (2007).
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Z. M. Zeng, J. F. Feng, Y. Wang, X. F. Han, W. S. Zhan, X.-G. Zhang, and Z. Zhang, Probing Spin-flip Scattering in ballistic nanosystem, Physical Review Letters 97, 106605 (2006).
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Z. M. Zeng, X. F. Han, W. S. Zhan, Y. Wang, Z. Zhang, and S. F. Zhang, Oscillatory tunnel magnetoresistance in double barrier magnetic tunnel junction, Physical Review B 72, 054419 (2005).
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