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Name: |
DONG Jianrong 董建荣 |
Department: |
Division of Nano-devices & Materials |
Position: |
Professor |
Expertise: |
Metal-Organic Vapor Phase Epitaxy (MOVPE); Characterization of III-V semiconductor materials;
Semiconductor lasers and multijunction solar cells; |
Email: |
jrdong2007@sinano.ac.cn |
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Research Interest: |
1. MOVPE growth of multiple junction solar cells;
2. Photovoltaic devices design and characterizations;
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Experience: |
Employment
Jan. 2008 - Present
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Professor
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Division of Nano-devices and Materials, SINANO, CAS
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Jul. 2000 - Jan.2008
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Research Scientist
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Optoelectronics Cluster, Institute of Materials Research and Engineering(IMRE), Singapore
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Sept. 1997 - Jul. 2000
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Research Associate
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Optoelectronics Cluster, Institute of Materials Research and Engineering(IMRE), Singapore
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Mar. 1996 - Aug.1997
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Research Associate
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Institute of Semiconductors, CAS
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Education
Ph.D. 1996
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Semiconductor physics and
semiconductor devices
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Institute of Semiconductors, CAS
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M.E. 1992
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Semiconductor devices and microelectronics
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Xidian Univeristy
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B.E. 1989
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Semiconductor physics and devices
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Xidian University
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Selected Publication: |
- K.L. Xiong, S.L. Lu, D.S. Jiang, J.R. Dong, and H. Yang, “Effective Recombination Velocity of Textured Surfaces”, Appl. Phys. Lett. 96(19), 193107 (2010).
- C.K. Chia, J R. Dong, B.K. Ng, “Anisotropic optical response of InAs/InP quantum dot avalanche photodiodes”, Appl. Phys. Lett. 94(5), 053512(2009).
- C. K. Chia, J.R. Dong, D.Z. Chi, A. Sridhara, A.S. W.Wong, M. Suryanan, G.K.Dalapati, S.J. Chua, anf S.J. Lee, “Effects of AlAs interfacial layer on material and optical properties of GaAs/Ge (100) epitaxy”, Appl. Phys. Lett. 92(14), 14905 (2008).
- J. H. Teng, J. R. Dong, S. J. Chua, B. S. Foo, M. Y. Lai, Y. J. Wang, S. S. Ang, and R. Yin, “Distributed Bragg reflector laser using buried SiO2 grating and self-aligned band gap tuning”, Appl Phys. Lett. 90(17), 171107 (2007).
- J.R. Dong, J.H. Teng, S.J. Chua, B.C. Foo, Y.J. Wang, and R. Yin, “MOCVD growth of 980 nm InGaAs/GaAs/AlGaAs graded index separate confinement heterostructure quantum well lasers with TBAs” J. Crystal Growth 289, 59(2006).
- J.R. Dong, J.H. Teng, S.J. Chua, Y.J. Wang, B.C. Foo, and R. Yin “InGaAsP/GaInP/AlGaInP 0.8 m QW lasers grown by MOCVD using TBP and TBAs” J. Crystal Growth 281, 323(2005).
- J.R. Dong, S.J. Chua, Y.J. Wang and H.R. Yuan, “Substrate orientation dependence of In composition of AlGaInP epilayers grown by MOCVD”, J. Crystal Growth 269, 408(2004).
- J.R. Dong, J.H. Teng, S.J. Chua, B.C. Foo, Y.J. Wang, L.W. Zhang, H.R.Yuan, and S. Yuan, “Continuous-wave operation of AlGaInP/GaInP quantum-well lasers grown by metalorganic chemical vapor deposition using tertiarybutylphosphine”, J. Appl. Phys. 95(9), 5252(2004).
- J.R. Dong, J.H. Teng, S.J. Chua, B.C. Foo, Y.J. Wang, H.R. Yuan, and S. Yuan, “650-nm AlGaInP mutiple-quantum-well lasers grown by metalorganic chemical vapor deposition using tertiarybutylphosphine”, Appl. Phys. Lett. 83(4), 596(2003).
- J.H. Teng, J.R. Dong, S.J. Chua, D.A. Thompson, B.J. Robinson, A.S.W. Lee, John Hazell, and Irwin Sproule “Impurity free intermixing in compressively strained InGaAsP multiple quantum well structures”, Materials Science in Semiconductor Processing, 4, 621(2001).
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