Time: 09:30 a.m., March 26, 2014
Location: E321, Measurement Buliding, SINANO
Abstract:
Rapid progress in synthesis and processing of nanomaterials has created a pressing demand for greater scientific understanding of thermal transport at the nanoscale. Employing the related interweaving surface/interface and confinement phenomena, two key research paradigms of importance to energy conversion and transport will be discussed. On the one hand, owing to miniaturization and nanostructuring, heat conduction can be significantly hindered in a controlled manner so that materials with very low thermal conductivity can be nanofabricated, which can be beneficial for energy conversion applications, e.g. in high efficiency thermoelectrics. On the other hand, interfacial thermal transport can be improved by phonon manipulation such that low interfacial thermal resistance can be realized in electronics to enhance heat dissipation in thermal management. This presentation will focus on interfacial heat transfer in electronics (thermal management). In particular, I will take GaN/SiC interface as an example to describe methods to reduce interfacial thermal resistance by interface nanoengineering and by taking advantage of nanoconfinement effect. Our results show that for thermal management of GaN-based electronics the overall thermal transport is dominated by the interfacial thermal resistance. By nanoengineering the interface, the interfacial thermal resistance can be significantly reduced. These results exemplify opportunities and challenges of nanoengineering in nanoscale thermal transport and provide a new perspective to innovative thermal management.
Biography:
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