Metamorphic Growth of III-V Devices on Silicon toward Electronic-Photonic Monolithic Integration

Academic Report：Metamorphic Growth of III-V Devices on Silicon toward Electronic-Photonic Monolithic Integration 

Speaker：Prof. Kei May Lau 

Hoster：Prof. Qian Sun 

Time: Friday 9:30 -10:45a.m., 8th May. 

Place: D111 SINANO

Abstract: 

Integrating high-performance III-V devices on the mature silicon platform has been a long pursuit over the past few decades. Approaching the end of scaling in silicon-based ICs, along with impressive performance demonstrated by III-V based devices for RF and logic applications, the quest for III-V-IV integration is timelier than ever. Although wafer bonding has been successfully demonstrated for integrating various III-V devices including lasers on Si, direct epitaxial growth is a desirable alternative, particularly from the manufacturing perspective. Depending on applications, devices have diverse requirements and somewhat different tolerance of various kinds of defects. Furthermore, in optimizing for certain device performance, delicate balancing of the device and material structural designs and requirements are of paramount importance. One has to navigate through the complex matrices of growth parameters, material characteristics, and device performance that can result in quality devices integrable on silicon. We have demonstrated metamorphic growth of high performance III-V transistors on Si for low-power logic applications, as well as high-speed photodetectors. In this talk, the key issues of growing highly-mismatched III-V devices on silicon will be discussed. A newly developed InP buffer on silicon templates allowing the growth of InAlGaAs/InAlAs multi-quantum wells (MQWs) emitting at ~1310 nm will also be discussed.   

Bio: 

Professor Kei May Lau received the B.S. and M.S. degrees in physics from the University of Minnesota, Minneapolis, and the Ph.D. degree in Electrical Engineering from Rice University, Houston, Texas.  She was on the ECE faculty at the University of Massachusetts/Amherst and initiated MOCVD, compound semiconductor materials and devices programs. Since the fall of 2000, she has been with the ECE Department at the Hong Kong University of Science and Technology (HKUST). She established the Photonics Technology Center for R&D effort in III-V materials, optoelectronic, high power, and high-speed devices. Professor Lau is a Fellow of the IEEE, and a recipient of the US National Science Foundation (NSF) Faculty Awards for Women (FAW) Scientists and Engineers (1991) and Croucher Senior Research Fellowship (2008).