High Crystal Quality GaN-on-Si to Achieve Excellent Isolation and Dynamic Performance without Carbon Doping
Speaker： Dr. Atsushi Nishikawa,ALLOS Semiconductors GmbH
Time：Thursday,10:30a.m.,28th March
Place： A722
Abstract：
GaN-on-Si HEMTs are very attractive for power device applications. However, large lattice constant and thermal expansion coefficient mismatch between GaN and Si cause low crystal quality of GaN, which limits the isolation of GaN. To resolve the poor isolation iss...
Mar 27, 2019
