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XU Ke / 徐科
  • Department：Platform for Characterization & Test
  • Position：Professor
  • Expertise：Semiconductor and device physics
  • Email：kxu2006@sinano.ac.cn
Research Interest
1.III-nitride semiconductors and related devices,

2.Characterizations of novel materials and low-dimensional structures,

3.Theories and equipments for nano-characterization.

Experience:

Employment

Oct.2006-Present

Professor,

Director of Platform for Characterization &Test

SINANO,CAS,China

Jan.2004-Sep.2006

Associate Professor

School of physics, Peking university, China

Dec.2002-Dec.2003

Researcher

CREST-JST, Japan

Nov.1999-Nov.2002

Postdoctoral researcher

Center for frontier photonics, Chiba University ,Japan

Sep.1998-Oct.1999

Research assistant, Associate professor

Shanghai Institute of Optics and Fine Mechanics, CAS, China

Education

Ph.D.1998

Materials science

Shanghai Institute of Optics and Fine Mechanics, CAS,China

M.S.1995

Material science

Department of Material Sciences and Engineering, Xi'an Jiaotong University,China

B.S.1992

Materials Science

Department of Material Sciences and Engineering, Xi'an Jiaotong University, China

Selected Publication:
  1. Xu K, Yoshikawa A. Effects of film polarities on InN growth by molecular-beam epitaxy. APPLIED PHYSICS LETTERS, 83, 2, 251-253.
  2. Huang J., Xu K. Dislocation cross-slip in GaN single crystals under nanoindentation. Applied Physics Letters, 98, 22.
  3. Liu JQ, Wang JF, Gong XJ, Huang J, Xu K, Zhou TF, Zhong HJ, Qiu YX, Cai DM, Ren GQ, Yang H. Structure, stress state and piezoelectric property of GaN nanopyramid arrays. APEX, in press
  4. Gong XJ, Xu K, Wang JF, Yang H, Bian LF, Zhang JP, Xu ZJ. Growth behavior of GaN film along non-polar [1 1 –2 0] directions. Physica B, 2011, 406, 36–39.
  5. Jia TT, Zhou SM, Teng H, Lin H, Wang J, Liu JQ, Qiu YX, Huang J, Huang K, Bao F, Xu K. Anisotropic characteristics of a-plane GaN films grown on gamma-LiAlO2 (302) substrates by MOCVD. APPLIED SURFACE SCIENCE, 2010, 257, 4, 1181-1184.
  6. Shi L, Xu K, Xiong KL, Yang H, Ni J. Influence of the electronic states anisotropy on the band gap pressure coefficient of InxGa1-xN alloys. JOURNAL OF APPLIED PHYSICS, 2009, 106, 11, 113511