Faculty
Home People Faculty
ZHANG Ruiying / 张瑞英
  • Department：Division of Nano-devices & Materials
  • Position：Professor
  • Expertise：III-V material MOCVD growth; Surface engineering of solar cells and related component; Semiconductor optoelectronic devices and materials
  • Email：ryzhang2008@sinano.ac.cn
Research Interest
1.III-V solar cell MOCVD growth;

2.Surface engineering of Si solar cells，III-V solar cells, and concentrators;

3. InP and GaAs-based optoelectronic devices and materials.

Experience:
Employment

Jun.2008 - Present

Associate Professor

Division of Nano-devices and Related Materials,

SINANO,CAS

Jan. 2005 -Jan. 2008

Research Assistant

Photonics group, Department of Electrical & Electronics Engineering,

Bristol University, Bristol,UK

Oct. 2002 -Dec.2004

Postdoctoral

Joint appointment at Beijing Jiaotong University and 

Institute of Semiconductors,CAS

Jul.1994 -Aug. 1996

Math Teacher

No.27 Middle School, Baotou city, InnerMongolia

Education

Ph.D. 2002 

Microelectronics and Solid-State Electronics

Institute of Semiconductors,CAS

M.S.1999

Condensed Matter Physics

Henan Normal University

B.S.1994

Physics

Inner Mongolia University for the Nationalities
Selected Publication:
  1. Ruiying.Zhang, B. Shao, J. Zhang, J. Dong, and H. Yang, “Broadband Antireflection (alga)inp Subwavelength Structure Fabricated by Nanosphere Litheography” International Conference on Materials for Advanced Technology (ICMAT-2011),1 June -1 July, Suntec, Singapore, (2011)
  2. Ruiying Zhang, O. Ansell, Z, Ren, S.yu,"Flexible coupled single ring tunable laser"Conference on Quantum Electronics and Laser Science Conference on Lasers and Electro-Optics （CLEO/QELS-2010）San-Jose？ McEnery Convention Center in San Jose，California, May 16-21,(2010)
  3. Ruiying. Zhang, Z. Ren, S. Yu, “Loss-reduction in flexibly vertical-coupled ring lasers through asymmetric double shallow ridge and ICP/ICP cascade etching” IEEE Photon. Technol. Lett.,(2008),22, 1821-1823
  4. Ruiying.Zhang, O.Ansell, Z.Ren, S.Yu, ,“Flexible coupled single semiconductor ring resonator through active vertical couplers ” IEEE Photon. Technol. Lett. (2008), 13, 1202-1204
  5. Ruiying Zhang, Z.Ren, S.Yu “Fabrication of InGaAsP/InP of double shallow ridge semiconductor rectangular ring lasers integrated with total internal reflection mirrors by RIE.ICP cascade etching technology”, IEEE Photon.Technol. Lett.,？ (2007),1,1714-1716
  6. Ruiying Zhang, Fan Zhou, Jing Bian, Lingjuan Zhao, Shuisheng Jian, Siyuan Yu, and Wei Wang “short carrier lifetime semiconductor optical amplifier with n-type modulation-doped multiple quantum wells”, Semicond. Sci.Technol. (2007),22, 283-286,
  7. Ruiying Zhang, Wei Wang, Fan zhou, Baojun Wang, Lufeng Wang, Jing Bian, Lingjuan Zhao, Hongliang Zhu, and Shuisheng Jian, “1.5m n-type InGaAsP/InGaAsP modulation-doped multiple quantum wells DFB laser by MOCVD” Semicond. Sci.Technol. (2006) ,21, 306-310
  8. Rui-ying Zhang, Wei Wang, Fan Zhou, Jing Bian, Ling-juan Zhao, Hong-liang Zhu, Shui-sheng Jian “Low threshold current density 1.5m strained-MQW laser by n-type modulation-doped multiple quantum well structure”, Journal Materials Science Forum, (2005),475-479, 1663-1667
  9. Shu Rong Wang, Wei Wang, Hongliang Zhu, Lingjuan Zhao, Ruiyin Zhang, Fan Zhou,？ Huiyun Shu and Rufeng Wang, “MOVPE growth of graded-strained bulk InGaAs/InP for broad band optoelectronics device applications”, Journal of Crystal Growth,(2004), 260,464-468
  10. Ruiying Zhang,Jie Dong Wei Wang, et al.,“ semiconductor optical amplifier optical gate with graded strained bulk-like structure” Opt. Eng. (2003) 3, 798-802