Employment

Education

1. Xu K, Yoshikawa A. Effects of film polarities on InN growth by molecular-beam epitaxy. APPLIED PHYSICS LETTERS, 83, 2, 251-253.
2. Huang J., Xu K. Dislocation cross-slip in GaN single crystals under nanoindentation. Applied Physics Letters, 98, 22.
3. Liu JQ, Wang JF, Gong XJ, Huang J, Xu K, Zhou TF, Zhong HJ, Qiu YX, Cai DM, Ren GQ, Yang H. Structure, stress state and piezoelectric property of GaN nanopyramid arrays. APEX, in press
4. Gong XJ, Xu K, Wang JF, Yang H, Bian LF, Zhang JP, Xu ZJ. Growth behavior of GaN film along non-polar [1 1 –2 0] directions. Physica B, 2011, 406, 36–39.
5. Jia TT, Zhou SM, Teng H, Lin H, Wang J, Liu JQ, Qiu YX, Huang J, Huang K, Bao F, Xu K. Anisotropic characteristics of a-plane GaN films grown on gamma-LiAlO2 (302) substrates by MOCVD. APPLIED SURFACE SCIENCE, 2010, 257, 4, 1181-1184.
6. Shi L, Xu K, Xiong KL, Yang H, Ni J. Influence of the electronic states anisotropy on the band gap pressure coefficient of InxGa1-xN alloys. JOURNAL OF APPLIED PHYSICS, 2009, 106, 11, 113511