1. Heteroepitaxy of III-Nitride semiconductors on Si substrates
2. GaN-on-Si Optoelectronics, including blue/green/UV LEDs and laser diodes
3. GaN-on-Si Power Electronics and RF Electronics, including e-mode HEMT, SBD, PiN, and JBS
Employment
| Nov. 2011 – Present | Professor | Division of Nano-devices, SINANO, CAS |
| Jun. 2010 – Oct. 2011 | Epi R&D Scientist | Bridgelux, Inc., USA |
| Sept. 2009 – May 2010 | Associate Research Scientist | Department of Electrical Engineering, Yale University, USA |
Education
| Ph.D. 2009 | Engineering & Applied Science | Yale University |
| M.E. 2005 | Microelectronics & Solid State Electronics | Institute of Semiconductors, CAS |
| B.S. 2002 | Materials Physics | University of Science & Technology of China |
1. Yi Sun, Kun Zhou, Qian Sun*, Jianping Liu, Meixin Feng, Zengcheng Li, Yu Zhou, Liqun Zhang, Deyao Li, Shuming Zhang, Masao Ikeda, Sheng Liu and Hui Yang; "Room-temperature continuous-wave electrically injected InGaN-based laser directly grown on Si", Nature Photonics 10, 595 (2016).
2. Yi Sun, Kun Zhou, Meixin Feng, Zengcheng Li, Yu Zhou, Qian Sun*, Jianping Liu, Liqun Zhang, Deyao Li, Xiaojuan Sun, Dabing Li, Shuming Zhang, Masao Ikeda, and Hui Yang; “Room-temperature continuous-wave electrically pumped InGaN/GaN quantum well blue laser diode directly grown on Si”, Light: Science & Applications 7, 13 (2018).
3. Shuai Su, Yaozong Zhong, Yu Zhou, Hongwei Gao, Xiaoning Zhan, Qian Sun*, and Hui Yang; “Self-terminated Gate Recessing with a Low Density of Interface States and High Uniformity for Enhancement-mode GaN HEMTs”, Proceedings of the 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 317-320, (2020).
4. Yaozong Zhong, Jinwei Zhang, Shan Wu, Lifang Jia, Xuelin Yang, Yang Liu, Yun Zhang, and Qian Sun*, “A Review on the GaN-on-Si Power Electronic Devices”, Fundamental Research 2, 463 (2022).
5. Meixin Feng, Jianxun Liu, Qian Sun*, Hui Yang, “III-nitride semiconductor lasers grown on Si”, Progress in Quantum Electronics 77, 100323 (2021).
6. Yaozong Zhong, Shuai Su, Yu Zhou, Hongwei Gao, Xin Chen, Junlei He, Xiaoning Zhan, Qian Sun*, and Hui Yang; “Effect of Thermal Cleaning Prior to p-GaN Gate Regrowth for Normally Off High-Electron-Mobility Transistors”, ACS Applied Materials & Interfaces 11, 21982 (2019).
7. Rui Zhou, Meixin Feng, Jin Wang, Qian Sun*, Jianxun Liu, Shuming Zhang, Masao Ikeda, Tong Liu, Zengli Huang, Xing Sheng, and Hui Yang; “InGaN-based lasers with an inverted ridge waveguide heterogeneously integrated on Si(100)”, ACS Photonics 7, 2636 (2020).
8. Xiaolu Guo, Yaozong Zhong, Xin Chen, Yu Zhou, Shuai Su, Shumeng Yan, Jianxun Liu, Xiujian Sun, Qian Sun*, and Hui Yang, “Reverse leakage and breakdown mechanisms of vertical GaN-on-Si Schottky barrier diodes with and without implanted termination”, Applied Physics Letters 118, 243501 (2021).
9. Xiaolu Guo, Yaozong Zhong, Junlei He, Yu Zhou, Shuai Su, Xin Chen, Jianxun Liu, Hongwei Gao, Xiujian Sun, Qi Zhou, Qian Sun*, and Hui Yang, “High-Voltage and High-ION/IOFF Quasi-Vertical GaN-on-Si Schottky Barrier Diode with Argon-Implanted Termination”, IEEE Electron Device Letters 42, 473 (2021).
10. Yaozong Zhong, Shuai Su, Xin Chen, Yu Zhou, Junlei He, Hongwei Gao, Xiaoning Zhan, Xiaolu Guo, Jianxun Liu, Qian Sun*, Hui Yang, “Normally-off HEMTs with Regrown p-GaN Gate and Low-Pressure Chemical Vapor Deposition SiNx Passivation by using an AlN pre-layer”. IEEE Electron Device Letters. 40, 1495 (2019).
