Speaker：Prof. Yuriy Dedkov,SHANGHAI UNIVERSITY
Time：Thursday,4:30p.m.,10th May
Place：A622
Abstract：
Graphene-metal and graphene-semiconductor interfaces are the most interesting graphene-based objects, which attracts much attention from both application and fundamental science points of view. In this talk I will present several representative examples on the growth and structural as well as electronic structure studies of graphene layers on different substrates: gr/ Ni(111), gr/Ru(0001), and gr/Ge(110). Our recent works [1-3] combine intensive experimental and theoretical approaches and lead to the complete understanding of these interfaces with the possibility to predict the wide spectrum of properties of the tailored graphene-metal and graphene- semiconductor interfaces. Our works and present talk present a link between huge amount of experimental and theoretical data allowing one to understand the influence of the metallic or/and semiconducting substrates on the electronic properties of a graphene overlayer and how its properties can be modified in a controllable way. The further directions of studies and applications of the graphene-metal and graphene-semiconductor interfaces will be discussed.
[1] Y. Dedkov, E. Voloshina, and M. Fonin. “Scanning probe microscopy and spectroscopy of graphene on metals”, Phys. Status Solidi 252, 451 (2015). Invited Feature Article.
[2] Y. Dedkov and E. Voloshina. “Graphene growth and properties on metal substrates”, J. Phys.: Condens. Matter. 27, 303002 (2015). Invited Topical Review.
[3] J. Tesch, F. Paschke, M. Fonin, E. Voloshina, and Y. Dedkov. “The graphene/n-Ge(110) interface: structure, doping, and electronic properties”, Nanoscale 10, 6088 (2018).
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