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Electrodeposition of Nanomaterials for Semiconductor Applications

Speaker：Dr. HUANG Qiang
　　Time: Monday,10:00a.m.,24th August
　　Place:F606 SINANO
　　Abstract：As the microprocessor continues to scale, the critical dimensions of the state-of-the-art interconnect structures fall well below 50 nm. While Cu electrodeposition has been the process of choice since the 90 nm technology started more than 15 years ago, it currently faces significant challenges i...

Aug 24, 2015
Special report of Prof.Charles W. Tu

Title：
　　A. Photovoltaic Applications of Dilute Nitrides
　　B. Entrepreneurship Programs at UC San Diego
　　Speaker：Charles W. Tu 杜武青
　　Time：Friday,10:30 a.m.,21th August20
　　Place：A718
　　Abstract：
　　Dilute nitrides are interesting because only a small amount of nitrogen incorporation (~ 1%) in conventional III-V compounds results in very large bandgap bowing, ...

Aug 20, 2015
Intersubband devices from Wide Band Gap II-VI Semiconductors

SHEN Aidong
　　Department of Electrical Engineering, City College of New York, New York, NY 10031, USA
　　ashen@ccny.cuny.edu
　　ZnxCdyMg1-x-ySe-based wide band gap II-VI semiconductor materials and structures with adjustable band gap (direct) energies from 1.66 eV (c-CdSe, RT) to 3.7 eV (ZB-MgSe, RT) have been traditionally used to fabricate optical emitters and detectors in the visible and...

Aug 20, 2015
Time resolved studies of carrier and spin dynamics in III-V compound semiconductors

Speaker：Prof. Atsushi Tackeuchi,Waseda University
　　Time: Thursday,10:00-11:00a.m.,20th August
　　Place: A718 SINANO
　　Hoster：Prof. LU Shulong
　　Abstract:
　　Time resolved studies using sub-picoseond laser pulses unveil interesting aspects of carrier and spin dynamics in III-V compound semiconductors. Spin relaxation, tunneling and non-radiative recombination processes of various comp...

Aug 17, 2015

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