On September 23, 2011, Prof. Kevin J. Chen from Hong Kong University of Science and Technology (HKUST) was invited to visit SINANO. During his visit, Prof. Chen was appointed to be SINANO’s Guest Expert and Consultant of SINANO’s Nano-fabrication Facility as well. Prof. LIU Peihua, Secretary of the Party Committee and Prof. ZHANG Baoshun, Director of Nano-fabrication Facility attended the appointment meeting.

After his appointment, Prof. Chen presented an excellent report on “Challenges in GaN Power Electronics”, which introduced prospects and difficulties of GaN devices techonolgy, the new GaN HEMT devices. Many graduate students attended the report meeting and had a further communication with Prof. Chen.

About Prof. Kevin J. Chen
Prof. Chen received the B.S. degree from Peking University in 1988 and the PhD degree from University of Maryland, College Park, USA in 1993. From 1994 to 1995, he was a research engineer in NTT LSI laboratories, Atsugi, Japan, engaging in the research and development of functional quantum effect devices and heterojunction FET's (HFET's). From 1996 to 1998, he was an assistant professor in the Department of Electronic Engineering, City University of Hong Kong. Dr. Chen then joined the Wireless Semiconductor Division of Agilent Technologies, Inc., in 1999 working on RF power amplifiers used in dual-band GSM/DCS wireless handsets. In 2000, Dr. Chen joined Hong Kong University of Science and Technology (HKUST), where he is currently a professor in the Department of Electronic and Computer Engineering. At HKUST, he has carried out research in wide bandgap III-nitride devices, silicon-based microwave passive components and 3D through-silicon-via interconnects technology, GaN-based MEMS devices, and multi-band reconfigurable microwave filters. Currently, his group is focused on developing GaN device technologies for power management and high-temperature electronics applications.

Prof. Chen has authored or co-authored more than 250 publications in international technical journals and conference proceedings. Prof. Chen is a senior member of IEEE and a distinguished lecturer of IEEE Electron Device Society. He is also an associate editor of IEEE Transactions on Microwave Theory and Techniques and Japanese Journal of Applied Physics. He is a member of IEEE Electron Device Society Compound Semiconductor Devices and Circuits Committee.