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Nanowin upgrades its GaN substrate production
Author: COMPOUND SEMICONDUCTOR(CS)
Update time: 2014-12-29
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High volume 2in GaN substrates with reduced dislocation densities

Benefiting from an upgraded HVPE system and improved growth technology, Suzhou Nanowin is announcing mass production of "2 inch GaN substrates with improved dislocation densities. Its production capacity has been increased by around five times this year. Dislocation density will be reduced from around 5x106cm-2 to less than 5x105cm-2.

Suzhou Nanowin has been providing 2 inch freestanding GaN substrates since 2010, mainly for manufacturing UHB-LED and blue laser diodes. Since 2012, Nanowin has been able to grow undoped GaN substrates with carrier concentration of the order of 3x1015cm-3 to 5 x1016cm-3, and dislocation density as low as in 104cm-2, which is suitable for fabricating switch devices.

 Now, Nanowin can provide most customer-defined GaN substrates, including polar (Ga-face or N-face) and non-polar (a-plane and m-plane) substrate, GaN and AlN templates on sapphire or SiC substrates.

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