In the morning of May 8th, Professor Kei May Lau of Hong Kong University of Science and Technology visited Sinano for a exchange program invited by Professor Sun from device department and gave an academic speech on " Metamorphic Growth of III-V Devices on Silicon toward Electronic-Photonic Monolithic Integration ".

Integrating high-performance III-V devices on the mature silicon platform has been a long pursuit over the past few decades. As a specialist in this area, Professor Lau gave a speech on metamorphic growth of III-V devices on Silicon toward Electronic-Photonic Monolithic Integration. The speech was focused on issues of growing highly-mismatched III-V devices on silicon, and the main contents are as follows: 1, Motivation and challenge; 2, InGaAs on Si(001) by MOCVD; 3, InGaN MOSHEMT ( D-mode and E- mode); 4, Defect engineering approach; 5, InP growth on Si(001); 6, InAlGaAs/InAlAs quantum well on InP buffer.

Brief introduction of Prof. Lau: Professor Kei May Lau received the B.S. and M.S. degrees in physics from the University of Minnesota, Minneapolis, and the Ph.D. degree in Electrical Engineering from Rice University, Houston, Texas. She was on the ECE faculty at the University of Massachusetts/Amherst and initiated MOCVD, compound semiconductor materials and devices programs. Since the fall of 2000, she has been with the ECE Department at the Hong Kong University of Science and Technology (HKUST). She established the Photonics Technology Center for R&D effort in III-V materials, optoelectronic, high power, and high-speed devices. Professor Lau is a Fellow of the IEEE, and a recipient of the US National Science Foundation (NSF) Faculty Awards for Women (FAW) Scientists and Engineers (1991) and Croucher Senior Research Fellowship (2008).