Sitemap   |  Contact  |  Home  |  中文  |  CAS
ABOUT US
 
RESEARCH
 
PEOPLE
 
POSITIONS AVAILABLE
News & Events
  Events
  International Cooperation News
  Conference News
  Upcoming Events
  Location:Home > News & Events > Upcoming Events
Performance Enhancement Techniques for III-Nitride Power Transistors: double channel design and photon pumping
Author:
Update time: 2016-04-26
Close Text Size: A A A Print

Speaker:Prof. Kevin Jing Chen,Hong Kong University of Science and Technology

Sponsor:Prof.Cai Yong

Time:9:30a.m.Friday,April 29

Place:A718 SINANO

Abstract: Wide-bandgap GaN-based power transistors and rectifiers are promising enablers for high-efficiency power conversion and energy management systems, owing to the superior fundamental material properties. Currently, there is worldwide effort in commercializing lateral GaN-based heterojunction devices grown on low-cost and highly scalable Si substrates (i.e. GaN-on-Si platform) and manufactured with existing low-cost Si fabrication lines. The main focus of technology development has been on improving process robustness and uniformity, and improving device reliability and stability.

In this talk, I will present several new techniques in GaN-on-Si power device technology, including 1) new channel design for low on-resistance and gate recess robustness; and 2) photon pumping for enhanced dynamic performance.

Biography: Prof. Kevin J. Chen received his B.S. degree from Peking University, Beijing, China in 1988, and PhD degree from University of Maryland, College Park, USA in 1993. He has obtained industry experience by conducting R&D work on III-V high speed device technologies in NTT LSI Laboratories, Japan and Agilent Technologies, USA. Prof. Chen joined Hong Kong University of Science and Technology (HKUST) in 2000, where he is currently a professor in the Department of Electronic and Computer Engineering. Prof. Chen has more than 350 publications in international journals and conference proceedings. He has been granted 9 US patents on GaN electron device technologies. His research is currently focused on developing GaN device technologies for high-power and high-frequency applications.

He is a Fellow of IEEE. He is a member of the technical committee of power semiconductor devices and ICs in IEEE Electron Device Society. He is a guest editor for the special issue of IEEE Transactions on Electron Device on “GaN Electronic Devices”. He is an editor for IEEE Transactions on Electron Devices, and has served as an editor for IEEE Transactions on Microwave Theory and Techniques and Japanese Journal of Applied Physics.

NEWS & EVENTS
 
INTERNATIONAL COOPERATION
 
EDUCATION & TRAINING
 
RESOURCES
Copyright ©2008-2011 Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), CAS
Address: 398 Ruoshui Road, SEID, SIP, Suzhou, 215123, China|Tel:+86512 6287 2509|Fax:+86512 6260 3079|Email: administrator@sinano.ac.cn