Speaker：Prof. Yuriy Dedkov,SHANGHAI UNIVERSITY
Graphene-metal and graphene-semiconductor interfaces are the most interesting graphene-based objects, which attracts much attention from both application and fundamental science points of view. In this talk I will present several representative examples on the growth and structural as well as electronic structure studies of graphene layers on different substrates: gr/ Ni(111), gr/Ru(0001), and gr/Ge(110). Our recent works [1-3] combine intensive experimental and theoretical approaches and lead to the complete understanding of these interfaces with the possibility to predict the wide spectrum of properties of the tailored graphene-metal and graphene- semiconductor interfaces. Our works and present talk present a link between huge amount of experimental and theoretical data allowing one to understand the influence of the metallic or/and semiconducting substrates on the electronic properties of a graphene overlayer and how its properties can be modified in a controllable way. The further directions of studies and applications of the graphene-metal and graphene-semiconductor interfaces will be discussed.
 Y. Dedkov, E. Voloshina, and M. Fonin. “Scanning probe microscopy and spectroscopy of graphene on metals”, Phys. Status Solidi 252, 451 (2015). Invited Feature Article.
 Y. Dedkov and E. Voloshina. “Graphene growth and properties on metal substrates”, J. Phys.: Condens. Matter. 27, 303002 (2015). Invited Topical Review.
 J. Tesch, F. Paschke, M. Fonin, E. Voloshina, and Y. Dedkov. “The graphene/n-Ge(110) interface: structure, doping, and electronic properties”, Nanoscale 10, 6088 (2018).