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Strain Engineering of III-V and Group-IV Semiconductors
Update time: 2018-08-30
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Speaker:Prof. Minjoo Larry Lee
Time:Wednesday,3:00p.m.,5th September

In this talk, He will describe our efforts to expand the reach and capabilities of III-V optoelectronics using an approach that spans from molecular beam epitaxy growth to device fabrication. In particular, they seek opportunities to significantly boost optoelectronic device performance and functionality through incorporation and integration of lattice-mismatched materials. In the first part of the talk, he will describe efforts in his group to marry the high efficiency of III-V solar cells with the low-cost manufacturing of silicon. Over the past several years, they have successfully reduced the dislocation density of GaAsP cells on Si by >20′, enabling them to set several new efficiency records. Next, He will discuss mid-infrared lasers on InP where they employ a compositionally graded buffer both to control the critical thickness and emission wavelength of type-I InAs quantum wells and as a lower laser clad. In the final part of the talk, he will discuss growth of nanocomposite materials consisting of Ge nanowires embedded in a III-V matrix. They demonstrate the ability to widely tune the morphology, density, and tensile strain in Ge nanostructures formed using this novel technique.

Minjoo Larry Lee received the Sc.B. in Materials Science with honors from Brown University, Providence, RI in 1998 and the Ph.D. in electronic materials from the Massachusetts Institute of Technology (MIT), Cambridge, MA in 2003. From 2003 to 2006, he was a Postdoctoral Researcher with the Microsystems Technology Laboratory at MIT, and from 2006-2007, he was with the Center for Thermoelectrics Research at RTI International in Durham, NC. In 2008 he joined Yale University in New Haven, CT as an assistant professor of electrical engineering, and in 2016 he joined UIUC as an associate professor of electrical and computer engineering. He is the author or coauthor of over 160 technical papers and conference proceedings and holds nine patents. He has received numerous recognitions including: IBM faculty award; North American conference on MBE (NAMBE) Young Investigator Award; DARPA Young Faculty Award; NSF CAREER award; and the IEEE Electron Device Society George E. Smith award. His advisees have won 8 best presentation prizes at the IEEE Photovoltaic Specialists Conference, MRS fall meeting, Electronic Materials Conference, and NAMBE. He has also been honored for his teaching in areas including circuits and electromagnetics.

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