Speaker：Dr.Liao zhongquan
Time： Monday,10:00a.m.,7th January
Place： A718

Abstract：In-situ transmission electron microscopy (TEM) is a technique where a TEM tool is used to monitor a sample in real time. It provides kinetic information on a material under certain stimuli. The fast development in the microscopy instrumentation advances in-situ TEM into a fast-growing, increasing important and fascinating technique in various fields ranging from materials science to chemistry, biology, etc.
In our study, several in-situ experimental methodologies in the TEM were developed to investigate several nanomaterials for electronics applications. An in-situ approach was carried out to study the time- dependent dielectric breakdown (TDDB) failure mechanisms and degradation kinetics in on-chip interconnect stacks. An in-situ mechanical testing system was utilized to stretch the patterned graphene nanoribbons (GNRs), aiming to open a bandgap by strain engineering. In-situ strain measurements of silicon close to through silicon via (TSV) in the 3D chip was performed at elevated temperatures. All experiments were accomplished inside the TEM, which provide a unique perspective for fundamental understanding of materials’response under certain stimuli.