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Exploratory materials grown by MBE @ imec
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Update time: 2019-11-28
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Speaker: Dr. Clement  Merckling, Interuniversity Microelectronics Centre (IMEC)
Time
Thursday,14:30 p.m., 28th November
Place
Room210,Shangshanyuan
Sponsor
Prof. DING Sunan

Bioreactor and biomaterials for regenerative medicine

 
Biography:

Clement  Merckling obtained in 2007 a PhD in Material Sciences from the Ecole Centrale de Lyon in France. His PhD thesis between INL/CNRS laboratory and ST Microelectronics company was focused on the Molecular Beam Epitaxy (MBE) of oxides on Si substrates for high-k gate dielectrics in advanced CMOS devices.

During the period 2007 - 2013, he worked as scientist and then as senior scientist, driving the Molecular Beam Epitaxy (MBE) activities @ imec including III-V semiconductors heteroepitaxy, high-k oxide growth and passivation studies for high-m channels (III-V & GeSn).

In 2013, as a principal member of technical staff, he took the technical lead of III-V epitaxy activities for the IMEC Logic and Photonic programs, focusing on the selective area growth of III-V compounds on Silicon by Vapor Phase Epitaxy (MOVPE). Through the fundamental understanding of the heteroepitaxial processes, world-first III-V FinFET devices and III-V Laser devices monolithically integrated on Silicon were demonstrated at IMEC.

Since 2018, he is focusing on exploratory materials grown by MBE and Pulsed Laser Deposition (PLD)  for beyond CMOS devices.

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