Sitemap   |  Contact  |  Home  |  中文  |  CAS
News & Events
  Upcoming Events
  Location:Home > News & Events > Upcoming Events
9GaN-based Tunnel Junction and Applications to Optical Devices
Update time: 2020-01-07
Close Text Size: A A A Print

Speaker: Prof. Seong-Ran Jeon, Korea Photonics Technology Institute

TimeFriday, 10:30 ,17th January


SponsorProf. SUN Qian



Abstract: GaN-based semiconductors have been of great interest because of their enormous potential for optoelectronic applications such as light-emitting diodes and vertical cavity surface emitters in the visible and violet light regions. In order to improve the performance of optoelectronic devices, it is crucial to requiring high quality low ohmic contacts on p-type GaN in order to minimize the heating of the device. Another requirement for light efficiency in a LED is that the current spreading layer must have a high transmittance in the visible region in order to have a maximum amount light. Although the technology has matured, there still exist challenges in optimizing the growth of high p-type doping and in device fabrication aspects. One way to spread current in GaN-based device is to remove the lateral hole conduction.

In this seminar, I will talk various photonic devices based on III-V compound semiconductors with a focus on tunnel junctions to eliminate lateral hole excitation currents and devices from ultraviolet to visible light-emitting diodes for solid-state lighting and water/air/food sterilization applications. The aspects of device and materials physics, material-related technical issues, and state-of-the-art device technology will be described.


Seong Ran Jeon received her B.S., M.S. degrees in physics of solid state and Ph.D. degree in semiconductor physics from Jeonbuk National University, Korea, in 1992, 1994, and 2003, respectively.

From 2003 to 2004, she was with the Department of Electrical Engineering, Yale University, New Haven, Connecticut, Prof. Jung Han's lab, as a Postdoctoral associate, where she was active in the field of AlGaInN-based high power 340 nm and 280 nm UVLEDs and 410 nm VCSELs.

Since 2004, she has been a Principal researcher at the Korea Photonics Technology Institute (KOPTI), Gwangju, Korea. Her research focus has been on the ultraviolet light Emitters with 280~365nm wavelengths for application to Sterilization/Purification and avalanche photodiodes (APDs) for detection biomolecule fluorescence using AlGaN semiconductor 

She has been published more than 60-papers and above 30-patents in this field. Her research results of a tunnel junction were also published in the international magazine Compound semiconductor as research review paper.   

Dr. Jeon is a member of the Korea Physical Society and the Korea Society of LED & Optoelectronics.

Copyright ©2008-2011 Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), CAS
Address: 398 Ruoshui Road, SEID, SIP, Suzhou, 215123, China|Tel:+86512 6287 2509|Fax:+86512 6260 3079|Email: