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  • Home
  • About Us
    • Brief Introduction
    • Directors
    • Address from the Director
    • Contact
  • Members
    • Leaders
    • Distinguished Youths
    • Faculty
    • Guest Experts
  • Research
  • News & Events
  • International Cooperation
    • Introduction
    • Cooperative Organizations
  • Resources
Research
HomeResearch
  • Scientists Develop Selective Polarity Conversion Method to Print n-Type Bottom-Gate CNT-TFT and Applicate it to COMS Inverters
    2017-04-19
  • A Novel Method to Fabricate Normally-off p-GaN/AlGaN/GaN HEMT
    2017-02-23
  • Bringing Plasmonic Scattering Coloration Functionality into Photovoltaic Devices
    2017-02-21
  • Metamaterial Absorber Integrated Microfluidic Sensor
    2017-02-21
  • Enhancement Effects of Transparent Conductive Oxide on the GaN UV Photodetectors
    2017-01-20
  • Efficient Terahertz Modulator Realized by the 2D Plasmons in Semiconductor Heterostructure
    2016-12-27
  • Tungsten Oxide Materials with Wide Optoelectronic Applications
    2016-12-19
  • New Progress Made in the Field of Inorganic Metallic Nanocrystals’ Fabrication from SINANO
    2016-12-16
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