Sitemap   |  Contact  |  Home  |  中文  |  CAS
  Research Divisions
  Shared Research Facilities
  Research Progress
  Location:Home > Research > Research Progress
Step-Flow Growth of Green-Emitting Idium Gallium Nitride Quantum Wells
Author: TIAN Aiqin
Update time: 2017-11-21
Close Text Size: A A A Print

Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences has improved green light internal quantum efficiency (IQE) from indium gallium nitride (InGaN) quantum wells (QWs) by increasing the miscut angle of the gallium nitride template to encourage step-flow growth.
The researchers claim that step-flow QWs have not been achieved up to now for green light-emitting InGaN. Instead, green InGaN QWs tend to be formed from two-dimensional (2D) island growth.
The team was partly motivated by the desire for improved green light performance in laser diodes (LDs) for pico-projectors and displays. Indeed, the work included the fabrication of laser diodes with reduced threshold current.
High-quality step-flow growth for 27%-indium-content green QWs was encouraged by increasing the miscut angle of the GaN/sapphire template from 0.20° to 0.48°. This reduced the step terrace width from~80nm to~30nm, respectively (Figure 1). This decreased the distance that adatoms had to diffuse on the surface before being incorporated into the step growth front.

Figure 1 Schematic of 2D island InGaN QW growth on miscut template with large terraces. (Image by SINANO)

The lower growth temperatures needed for high-indium-content InGaN reduces the diffusion distance of adatoms. Low-temperature growth with insufficient miscut leads to two-dimensional island or even three-dimensional growth, which can be indicated through increased surface roughness.
Green InGaN 4-period multiple QWs (MQWs) had x-ray diffraction (0002) peak full widths at half maximum (FWHMs) of 351arcsec and 381arcsec for 0.48° and 0.20° miscuts, respectively. The narrower peak suggests sharper well/barrier interfaces from the higher crystal quality achieved through step-flow growth.
Room-temperature photoluminescence (PL) peaks were observed at 2.313eV and 2.309eV for 2D island and step-flow MQWs, respectively . It is noted that the FWHMs of green MQWs with step-flow morphology are smaller than that of green MQWs with 2D island morphology at all temperatures, being 131 meV and 166 meV at room temperature, respectively.
The researchers comment: “The smaller FWHM value indicates better potential uniformity, which is beneficial for the improvement of the peak gain of green laser diodes and is believed to result partially from the sharper well/barrier interface, consistent with the XRD result. The indium composition homogeneity may also have improved as a result of the step-flow morphology, but this requires further study.”

Figure 2 (a) Temperature dependence of FWHM values of green MQW samples. (b) Normalized temperature-dependent integral PL intensity.(Image by SINANO)

Comparing the PL at 10K and room temperature, the internal quantum efficiencies (IQEs) were estimated at 30% and 15% for the step-flow and 2D island samples, respectively. The researchers attribute the IQE improvement for step-flow growth to “better material quality and fewer non-radiative recombination centers in the step-flow MQW sample”.
Temperature-dependent PL analysis suggested that a kind of non-radiative recombination centers with an activation energy of 18.8 meV could be eliminated, resulting into significant increase of IQE.
Laser diodes fabricated from these materials demonstrated the benefit of step-flow growth with reduced threshold current at 300mA, compared with 500mA for the 2D island laser diodes. The researchers attribute this reduction to the improved IQE for step-flow material.
This research has been published in Applied Physics Letters entitled “Significant increase of quantum efficiency of green InGaN quantum well by realizing step-flow growth”.

Contact Information:

Prof.LU Shulong, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences


Copyright ©2008-2011 Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), CAS
Address: 398 Ruoshui Road, SEID, SIP, Suzhou, 215123, China|Tel:+86512 6287 2509|Fax:+86512 6260 3079|Email: