Faculty
Home People Faculty
ZENG Xionghui / 曾雄辉
  • Department：Characterization and Testing Platform
  • Position：Professor
  • Expertise：AlN single crystal growth, microstructure and opt-electronic properties characterization of nitride semiconductor, electron microscopy.
  • Email：xhzeng2007@sinano.ac.cn
Research Interest

 

1. Wide band-gap semiconductor AlN single crystal growth and applications

2. Rare earth doped nitride semiconductors and p-type nitride semiconductors

3.Electron microscopy

 

Experience:

Employment

 

Jan.2015-present        Professor                             Suzhou Institute of Nano-Tech and Nano-

                                                                                bionics, Chinese Academy of Sciences 

June. 2007-

Dec.2014

Associate Professor 

 

Suzhou Institute of Nano-Tech and Nano-bionics, Chinese Academy of Sciences

July. 2005-June, 2007

Postdoctoral 

Research Fellow 

Tsinghua University, Beijing, China 

 

Education

Ph.D. 2005

Material Science

Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences

M.S. 2002 

Physical Chemistry

Changchun Institute of Applied Chemistry, Chinese Academy of Sciences

B.S. 1999

Chemistry

Xiangtan University

     
Selected Publication:

  1. Di Di Li, Xu Jun Su, Jing Jing Chen, Lu Hua Wang, Jun Huang, Mu Tong Niu, Xiaodan Wang,

    Xionghui Zeng*, Ke Xu*. In？uence of sapphire substrate miscut on the surface morphology and microstructure of AlN films grown by HVPE, Journal of Crystal Growth, 2022, 592, 126731.

  2. J. Wang, X. Wang*, J. Chen, X. Gao, X. Zeng*, H. Mao, K. Xu*, Investigation on minority carrier lifetime, diffusion length and recombination mechanism of Mg-doped GaN grown by MOCVD, Journal of Alloys and Compounds. 2021, 870, 159477. 

  3. H. Ma, X. Wang*, F. Chen, J. Chen, X. Zeng*, X. Gao, D. Wang, H. Mao, K. Xu. Luminescence properties and energy transfer mechanism of Eu3+ and Tm3+ co-doped AlN thin films. Journal of Luminescence, 2021, 236: 118082. 

  4. J. Wang, X. Wang, W. Shu, X. Zeng*, J. Chen, K. Xu*, Origin of blue luminescence in Mg-doped GaN, AIP Advances. 2021,11,035131. (被美国物理研究所AIP选为Featured Article和SCI light Paper, https://aip.scitation.org/doi/10.1063/10.0003942 ). 

  5. Feifei Chen, Yonglu Xia, Xiaodan Wang*, Jiafan Chen, Xionghui Zeng*, Jianfeng Wang ,Ke Xu, Raman scattering and cathodoluminescence properties of Er3+ and Eu3+ co-doped GaN films[J]. Journal of Luminescence 2019, 206: 603 -607. 

  6. Feifei Chen, Xiaodan Wang*, Xiang Li, Shunan Zheng, Xionghui Zeng*, Ke Xu, Effects of Eu ions dose and annealing temperature on the structural and optical properties of Eu-implanted AlN thin films, Superlattices and Microstructures, 2019, 129: 47-53 

  7. Xiaodan Wang , Yajuan Mo , Xionghui Zeng*, Jianfeng Wang, and Ke Xu*. Simultaneous emission of red, green, and blue in Pr, Er, and Tm co-implanted GaN thin films, Materials Chemistry and Physics, 2017, 199: 567-570 

  8. X.D. Wang*, M.M. Yang, X.H. Zeng*,Y.J. Mo, J.C. Zhang, J.F. Wang, K. Xu*. Investigation of energy transfer mechanism in Er3+ and Tm3+ doped AlN crystalline films, Journal of Alloys and Compounds, 2017, 726: 209-213 

  9. Xiaodan Wang, Yajuan Mo, Xionghui Zeng*, Mingming Yang, Jianfeng Wang, Ke Xu. Cathodoluminescence properties of Pr, Tm co-implanted GaN thin films. Optical Materials Express, 2016, 6(5):  1692-1700 

  10. Yajuan Mo, Xiaodan Wang*, Mingming Yang, Xionghui Zeng*, Jianfeng Wang, Ke Xu. Temperature-dependent Cathodoluminescence Investigation of Er-implanted GaN thin films. Physica Status Solidi B: Basic Solid State Physics, 2015, 253(3): 515-520 

  11. Lin Gan, Fang-Fang Xu, Xiong-Hui Zeng, Zuo-Sheng Li, Zhi-Yong Mao, Ping Lu, Ying-Chun Zhu, Xue-Jian Liu, Lin-Lin Zhang. Multiple doping structures of the rare-earth atoms in β-SiAlON: Ce phosphors and their effects on luminescence properties. Nanoscale, 2015, 7(6): 11393—11400