-
S. Martin, C.-S. Chiang, J.-Y. Nahm, Tong Li, J. Kanichi, and Y. Ugai, Influence of the Amorphous Silicon Thickness on Top Gate Thin-Film Transistor Electrical Performances. Japan Journal of Applied Physics (2001), 40, 530-537.
-
Tong Li, J. Kanicki, W. Kong and F.L. Terry, Interference Fringe-Free Transmission Spectroscopy of Amorphous Thin Films, Journal of Applied Physics (2000), 88, 5764-5771.
-
Tong Li, and J. Kanicki, Microstructure Characterization of Hydrogenated Amorphous Thin Films in a Fringe-Free Environment, Journal of Applied Physics (1999), 85, 388.
-
Tong Li, J. Kanicki, and C. Mohler, Method of Collecting Pure Vibrational Absorption Spectra of Amorphous Thin Films, Thin Solid Films (1999), 349, 283.
-
Tong Li, and J. Kanicki, Observation of Angle Dependent Phonon Absorption in Hydrogenated Amorphous Silicon Nitride Thin Films, Applied Physics Letters (1998), 73, 3866.
-
Tong Li, and J. Kanicki, Longitudinal Vibrational Absorption Modes of Hydrogenated Amorphous Silicon Nitride Thin Films, Material Research Society Symposium Proceedings (1998), 507, 535.
-
Tong Li, C. Y. Chen, C. T. Malone, and J. Kanicki, High-Rate Deposited Amorphous Silicon Nitride for the Hydrogenated Amorphous Silicon Thin-Film Transistor Structures, Material Research Society Symposium Proceedings (1996), 424, 43.
-
Tong Li, J. Kanicki, M. Fitzner, and W. L. Warren, Investigation of Hydrogen Evolution and Dangling Bonds Creation Mechanism in Amorphous Silicon Nitride Thin Films, AMLCDs ’95 (1995), 123.
-
R. Arrathoon, J. Arshad, Tong Li, T. W. Lin, and B. Zhang, Optoelectronic Wide-Word Personality ROM’s for High-Speed Control Applications, Hybrid Image and Signal Processing III (1992), David P. Casasent, Andrew G. Tescher, Editors, Proc. SPIE. 1702, 200.
