杨辉----Suzhou Institute of Nano-tech and Nano-bionics,Chinese Academy of Sciences

Faculty

Home People Faculty

YANG Hui / 杨辉

Department：Division of Nano-devices & Materials
Position：Professor
Expertise：MBE and MOCVD growth; GaN based LED and LD; III-V solar cells;
Email：hyang2006@sinano.ac.cn

Research Interest

1. Semiconductor Optical-electronic devices;

2. GaN based device;

3. Semiconductor Physics;

Experience:

Employment

2006 -Present	Director	Suzhou Institute of Nano-tech and Nano-bionics, CAS
2002 -2006	Deputy director	Institute of Semiconductors, CAS
1996 -2002	Professor	Institute of Semiconductors, CAS
1993 -1996	Post-doctoral Researcher & Visiting Scientist	Paul-Drude-Institute for solid state electronics, Berlin, Germany
1990 -1992	Associate Professor & Research Associate	Institute of Semiconductors, CAS
1987 -1990	Research Associate	Institute of Semiconductors, CAS
1985 -1987	Research Assistant	Institute of Semiconductors, CAS

Education

Ph.D. 1991	Semiconductor Physics	Institute of Semiconductors, CAS
M.S. 1985	Semiconductor Physics	Institute of Semiconductors, CAS
B.S. 1982	Vacuum Electrics	Peking University

Selected Publication:

J. H. Zhu, L. J. Wang, S. M. Zhang, H. Wang, D. G. Zhao, J. J. Zhu, Z. S. Liu, D. S. Jiang, and H. Yang, “The fabrication of GaN-based nanopillar light-emitting diodes”, Journal of Applied Physics, 108, 074302 (2010)
Qian Sun, Jianfeng Wang, Hui Wang, Ruiqin Jin, Desheng Jiang, Jianjun Zhu, Degang Zhao, Hui Yang, Shengqiang Zhou, Mingfang Wu, Dries Smeets, and Andre Vantomme, “High-temperature AlN interlayer for crack-free AlGaN growth on GaN”, J. Appl. Phys. 104, 043516 (2008)
L. Q. Zhang, D. S. Jiang, J. J. Zhu, D. G. Zhao, Z. S. Liu, Y. T. Wang, S. M. Zhang, and H. Yang, “Confinement factor and absorption loss of AlInGaN based laser diodes emitting from ultraviolet to green”, Journal of Applied Physics, 105, 023104 (2009)
W. Liu, J. F. Wang, J. J. Zhu, D. S. Jiang, and H. Yang “Influence of the AlN interlayer crystal quality on the strain evolution of GaN layer grown on Si (111)” Applied Physics Letters, 90, 011914 (2007)
H. Wang, Y. Huang, Q. Sun, J. Chen, L. L. Wang, J. J. Zhu, D. G. Zhao, S. M. Zhang, D. S. Jiang, Y. T. Wang, and H. Yang “Effects of grain size on the mosaic tilt and twist in InN films grown on GaN by metal-organic chemical vapor deposition” Applied Physics Letters, 89, 092114, 2006
J. C. Zhang, D. S. Jiang, Q. Sun, J. F. Wang, Y. T. Wang, J. P. Liu, J. Chen, R. Q. Jin, J. J. Zhu, and H. Yang “Influence of dislocations on photoluminescence of InGaN/GaN multiple quantum wells” Applied.physics letters 87, 07 1908 2005
J. P. Liu, Y. T. Wang, and H. Yang “Investigations on V-defects in quaternary AlInGaN epilayers” Appl. Phys. Lett., Vol. 84, No. 26, 28 June 2004