Faculty
Home People Faculty
WANG Xuguang / 王旭光
  • Department：Division of Interdisciplinary Research
  • Position：Professor
  • Expertise：CMOS nano-electronics devices; Three-dimensional ICs for logic and memory devices; High performance solid state disk; Micro-Electro-Mechanical-System (MEMS)
  • Email：xgwang2009@sinano.ac.cn
Research Interest
1. Development of core FTL algorithms in solid state storage controller;
2. Development of PCIe based solid state drive with high I/O speed and large capacity;
3. Management of solid state drives in tiered storage system;
4. Mechanism of using solid state storage as cache in High Performance Computing. 
Experience:
Employment

Jan. 2012 - Present

Professor

Division of Interdisciplinary Research

Feb. 2010 – Dec. 2011

Professor

Division of Nanodevices & Materials, SINANO, CAS

Jun. 2007- Jan. 2010 

Technical Lead 

Alternative Technology Group, Seagate 

Jun. 2005 -May. 2007

Senior Device Engineer

Non-volatileMemoryTechnology Group, AMD/Spansion

Education

Ph.D. 2005

Electronic Engineering

University of Texas at Austin

M.S. 2002

Electronic Engineering

Rice University

B.S. 1999

Materials

Tsinghua University

Selected Publication:
  1. Xuguang Wang and Dim-Lee Kwong, “A novel high-k SONOS memory using TaN/Al2O3/Ta2O5/HfO2 /Si structure for fast speed and long retention operation”, IEEE Transactions on Electron Devices, Vol.53, #1, pp. 78-82, 2006
  2. Xuguang Wang, Jeff Peterson, Prashant Majhi, Mark I. Gardner and Dim-Lee Kwong, “Impacts of gate electrode materials on threshold voltage (Vth) instability in nMOS HfO2 gate stacks under DC and AC stressing”, IEEE Electron Device Letters, Vol.26, #8, pp. 553-556, 2005
  3. Xuguang Wang, Jeff Peterson, Prashant Majhi, Mark I. Gardner and Dim-Lee Kwong, “Threshold Voltage (Vth) Instability in HfO2 High-k Gate Stacks with TiN Metal Gate: Comparison between NH3 and O3 Interface Treatments”, IEEE Electron Device Letters, Vol.25, #11, pp. 719-722, 2004
  4. Xuguang Wang, Jun Liu, Feng Zhu, Naoki Yamada, and Dim-Lee Kwong, “A Simple Approach to Fabrication of High-Quality HfSiON Gate Dielectrics With Improved nMOSFET Performances”, IEEE Transactions on Electron Devices, Vol.51, #11, pp. 1798-1804, 2004
  5. Xuguang Wang, Jun Liu, Weiping Bai and Dim-Lee Kwong, “A Novel MONOS-Type Nonvolatile Memory Using High-k Dielectrics for Improved Data Retention and Programming Speed”, IEEE Transactions on Electron Devices, Vol. 51, #4, pp. 597-602, 2004
    Jong Jin Lee, Xuguang Wang, Weiping Bai, Nan Lu, Jun Liu and Dim-Lee Kwong, “Theoretical and Experimental Investigation of Si Nanocrystal Memory Device with HfO2 High-k Tunneling Dielectric”, IEEE Transactions on Electron Devices, V50, #10, pp. 2067-2073, 2003
  6. Jong Jin Lee, Xuguang Wang, Weiping Bai, Nan Lu, Jun Liu and Dim-Lee Kwong, “Theoretical and Experimental Investigation of Si Nanocrystal Memory Device with HfO2 High-k Tunneling Dielectric”, IEEE Symposium on VLSI Technology, Technical Digest, pp. 33-34 2003
  7. Xuguang Wang, Jie Zhu, H. Zhang, T. C. Lee, T. Vo, T. A. Rabson and M. A. Robert, “Processing and characterization of LiNbO3 Thin Film for Metal Ferroelectric Semiconductor Field Effect Transistor (MFSFET) Application” Integrated Ferroelectrics 40 (1-5): 1569-1578 2001
  8. Yuanbin Guo, Hongzhou Zhang, Xuguang Wang, J. R. Cavallaro, “VLSI Implementation of Mallat’s Fast Discrete Wavelet Transform Algorithm with Reduced Complexity”, IEEE Global Telecommunications Conference, Volume: 1, 25-29, pp. 320-324, 2001