Faculty
SHI Wenhua / 时文华
  • Department:Nanofabrication Facility
  • Position:Senior Engineer
  • Expertise:Optoelectronic devices; Nano-fabrication Technology
  • Email:whshi2007@sinano.ac.cn
Research Interest
  1. Infrared detector;
  2. Near-infrared detector on Si substrate.
Experience:
Employment

Jun. 2007 - Present 

Senior Engineer  

Nano-fabrication Facility, SINANO, CAS 

Education

Ph.D. 2007 

Microelectronic 

Institute of Semiconductors, CAS 

B.S. 2002 

Applied Physics 

USTC 

Selected Publication:
  1. W. H. Shi, C. B. Li, L. P. Luo, B. W. Cheng, Q. M. Wang, “Growth of Ge quantum dot mediated by boron on Ge wetting layer”, Journal of Crystal Growth, 2005, 279: 329-334.
  2. SHI Wen-Hua, MAO Rong-Wei, ZHAO Lei, LUO Li-Ping, WANG Qi-Ming, “Fabrication of Ge nano-dot heterojunction Phototransistors for improved Light detection at 1.55m”, Chinese Physics Letters. 2006, 23(3): 735-737.
  3. Wenhua SHI, Lei ZHAO, Liping LUO, Qiming WANG, “Investigation of Ge-Si atomic interdiffusion in Ge nano-dots multilayer structure by double crystal x-ray diffraction”, Journal of Materials Science and Technology, 2007, 23(3): 301-303.