1. The non-radiative rate for the impurity pair in GaN;
2. Researched the GaN and InGaN/Gan nanowires;
3. Researched an ordering orientation transition of alloy films;

Employment

Education

1. L. Shi, K. Xu, K. L. Xiong, H. Yang, and J. Ni, Influence of the electronic states anisotropy on the band gap pressure coefficient of InxGa1-xN alloys, J. Appl. Phys. 106, 113511 (2009).
2. L. Shi and J. Ni, Kinetic-anisotropy-induced ordering-orientation transitions calculated in CoPt alloys under various epitaxial growth conditions, Phys. Rev. B 77, 035407 (2008).
3. L. Shi and J. Ni, Kinetic anisotropy induced ordering orientation transition in epitaxial growth:A method to synthesize ordering orientation superlattices, Phys. Rev. Lett. 97(12), 126105 (2006)
4. L. Shi and J. Ni, Kinetically induced ordering oscillation during epitaxial growth of a fcc multilayer alloy, Phys. Rev. B 69(15), 155428 (2004)
5. L. Shi, H.T. Shi, and J. Ni, Compositional ordering kinetics of epitaxial growth of fcc alloy systems, Comput. Mater. Sci. 30, 326 (2004)