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Wang LJ, Zhang SM, Zhu JH, Zhu JJ, Zhao DG, Liu ZS, Jiang DS, Wang YT, Yang H, “Effect of surface treatment of GaN based light emitting diode wafers on the leakage current of light emitting diode devices”, Chin. Phys. B, 19, 017307 (2010)
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Zeng C, Zhang SM, Ji L, Wang HB, Zhao DG, Zhu JJ, Liu ZS, Jiang DS, Cao Q, Chong M, Duan LH, Wang H, Shi YS, Liu SY, Yang H, Chen LH, “Room-Temperature Continuous-Wave Operation of InGaN-Based Blue-Violet Laser Diodes with a Lifetime of 15.6 Hours”, CHINESE PHYSICS LETTERS, 27, 114215 (2010)
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Ji L, Zhang SM, Jiang DS, Liu ZS, Zhang LQ, Zhu JJ, Zhao DG, Duan LH, Yang H, “Fabrication and Characterization of High Power InGaN Blue-Violet Lasers with an Array Structure”, CHINESE PHYSICS LETTERS, 27, 054204(2010)
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J. H. Zhu, L. J. Wang, S. M. Zhang, H. Wang, D. G. Zhao, J. J. Zhu, Z. S. Liu, D. S. Jiang, and H. Yang, “The fabrication of GaN-based nanopillar light-emitting diodes”, Journal of Applied Physics, 108, 074302 (2010)
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L. Ji, D. S. Jiang, S. M. Zhang, Z. S. Liu, C. Zeng, D. G. Zhao, J. J. Zhu, H. Wang, L. H. Duan, H. Yang, “Time delay in InGaN multiple quantum well laser diodes at room temperature”, Chin. Phys. B, 19, 124211 (2010)
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L. Q. Zhang, D. S. Jiang, J. J. Zhu, D. G. Zhao, Z. S. Liu, Y. T. Wang, S. M. Zhang, and H. Yang, “Confinement factor and absorption loss of AlInGaN based laser diodes emitting from ultraviolet to green”, Journal of Applied Physics, 105, 023104 (2009)
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L. J. Wang, S. M. Zhang, Y. T. Wang, D. S. Jiang, J. J. Zhu, D. G. Zhao, Z. S. Liu, H. Wang, Y. S. Shi, H. Wang, S. Y. Liu, and H. Yang, “Curvature Correction of FWHM in the X-Ray Rocking Curve of Bent Heteroepitaxial Films” CHINESE PHYSICS LETTERS, 26, 076104 (2009)
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J H Zhu, L J Wang, S M Zhang, H Wang, D G Zhao, J J Zhu, Z S Liu, D S Jiang, Y X Qiu and H Yang,” The investigation on strain relaxation and double peaks in photoluminescence of InGaN/GaN MQW layers” J. Phys. D: Appl. Phys. 42 (2009) 235104
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Zhang Li-Qun, Zhang Shu-Ming, Jiang De-sheng, Wang Hui, Zhu Jian-jun, Zhao De-Gang, Liu Zong-Shun and Yang Hui, “GaN-based violet laser diodes grown on free-standing GaN substrate”, Chin. Phys. B, 18, 5350 (2009)
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Zhu, JH; Zhang, SM; Sun, X; Zhao, DG; Zhu, JJ; Liu, ZS; Jiang, DS; Duan, LH; Wang, H; Shi, YS; Liu, SY; Yang, H “Fabrication and optical characterization of GaN-based nanopillar light emitting diodes” CHINESE PHYSICS LETTERS, 25 (9): 3485-3488 SEP 2008
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ZHANG Li-Qun, ZHANG Shu-Ming, YANG Hui CAO Qing, JI Lian, ZHU Jian-Jun, LIU Zong-Shun, ZHAO De-GangJIANG De-Sheng, DUAN Li-Hong, WANG Hai, SHI Yong-Sheng, LIU Su-Ying, CHEN Liang-Hui, LIANG Jun-Wu “Continuous-wave operation of GaN based multi-quantum-well laser diode at room temperature CHIN.PHYS.LETT. V 25, 1281, 2008
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Zhao De-sheng, Zhang Shu-ming, Duan li-hong, Wang yu-tian, Jiang De-sheng, Liu Wen-bao, Zhang Bao-Shun, Yang Hui. “Effect of Ag on Electrical Properties of Ag/Ni/P-GaN Ohmic Contact” Chinese Physics Letter Vol.24.No.6(2007)1741
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D. Y. Li, Y. Z. Huang, J. J. Zhu, D. G. Zhao, Z. S. Liu, S. M. Zhang, X. J. Ye, M. Chong, L. H. Chen, H. Yang, and J. W. Liang, “Thermal Lensing Effect in Ridge Structure InGaN Multiple Quantum Well Laser Diodes”, J. Appl. Phys. 100, 046101 (2006).
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Li Deyao, Zhang Shuming, Wang Jianfeng1, Chen Jun, Chen Lianghui, Chong Ming, Zhu Jianjun, Zhao Degang, Liu Zongshun, Yang Hui, Liang Junwu, “Characteristics of the InGaN multiple quantum well blue-violet laser diodes”, Science in China.series E: 2006 vo.l49 No.6 727-732
