1. Epitaxial growth of group III nitride semiconductors;

2. Structure design, epitaxial growth, process and characterization for optoelectronic devices;

3. Photo-electronic device based on nanostructure.

Employment

Education

1. J. H. Zhu, S. M. Zhang, H. Wang, D. G. Zhao, J. J. Zhu, Z. S. Liu, D. S. Jiang, Y. X. Qiu and H. Yang, “The investigation on carrier distribution in InGaN/GaN multiple quantum well layers”, Journal of Applied Physics, 109, 093117 (2011)
2. H. Wang, D. S. Jiang, U. Jahn, J. J. Zhu, D. G. Zhao, Z. S. Liu, S. M. Zhang, Y. X. Qiu and H. Yang, “Investigation on the strain relaxation of InGaN layer and its effects on the InGaN structural and optical properties”, Physica B 405, 4668(2010).
3. U. Jahn, O. Brandt, E. Luna, X. Sun, H. Wang, D. S. Jiang, L. F. Bian and H. Yang, “Carrier capture by threading dislocations in (In,Ga)N/GaN heteroepitaxial layers” Physical Review B 81, 125314 (2010)
4. H. Wang, L L Wang, X Sun, J H Zhu, W B Liu, D. S. Jiang, J. J. Zhu, D. G. Zhao, Z. S. Liu, Y. T. Wang, S. M. Zhang, and H. Yang, “Suppression of indium droplet formation by adding CCl4 during metalorganic chemical vapor deposition growth of InN film”, Semicond. Sci. Technol. 24, 075004(2009)
5. H. Wang, D. S. Jiang, J. J. Zhu, D. G. Zhao, Z. S. Liu, Y. T. Wang, S. M. Zhang, and H. Yang, “Kinetically controlled InN Nucleation on GaN templates by metalorganic chemical vapor deposition”, J. Phys. D: Appl. Phys., 42 , 145410(2009).
6. D. G. Zhao, D. S. Jiang, J. J. Zhu, Z. S. Liu, H. Wang, S. M. Zhang, Y. T. Wang, and Hui Yang, “Role of edge dislocation and Si impurity in linking the blue luminescence and yellow luminescence in n-type GaN films”, Appl. Phys. Lett. 95, 041901 (2009)
7. H. Wang, D. S. Jiang, L. L. Wang, X. Sun, W. B. Liu, D. G. Zhao, J. J. Zhu, Z. S. Liu, Y. T. Wang, S. M. Zhang, and H. Yang, “Investigation on the structural origin of n-type conductivity in InN films”, J. Phys. D: Appl. Phys., 41, 135403 (2008).
8. H. Wang, Y. Huang, Q. Sun, J. Chen, L. L. Wang, J. J. Zhu, D. G. Zhao, S. M. Zhang, D. S. Jiang, Y. T. Wang and H. Yang,  “Effects of grain size on the mosaic tilt and twist in InN films grown on GaN by metalorganic chemical vapor deposition”, Applied Physics Letters, 89, 092114 (2006).
9. Q. Sun, Y. Huang, H. Wang, Q. Sun, J. Chen, R. Q. Jin, S. M. Zhang, H. Yang, D. S. Jiang, U. Jahn and K. H. Ploog, “Lateral phase separation in AlGaN grown on GaN with a high-temperature AlN interlayer”, Applied Physics Letters, 87, 121914 (2005).
10. Y. Huang, H. Wang, Q. Sun, J. Chen, D. Y. Li , Y. T. Wang, and H. Yang, “Low-temperature growth of InN by MOCVD and its characterization”, Journal of Crystal Growth, 276 (2005) 13.