Faculty
Home People Faculty
YU Guohao / 于国浩
  • Department：Nanofabrication facility
  • Position：Professor
  • Expertise：Semiconductor electron devices; Nano-fabrication process
  • Email：
Research Interest
GaN HEMTs & Vertical Devices for power & RF application;
Experience:

Employment

Nov.2021-present, Professor, Nanofabrication facility, SINANO, CAS

Jun.2020-Nov.2021,Assistant Professor, Nanofabrication facility, SINANO, CAS

Jun.2019-Jun.2020, Visiting Lecturer, IMaSS, Nagoya University, Japan

Aug.2013-Jun.2019, Assistant Professor, Nanofabrication facility, SINANO, CAS


Education

Ph.D. 2013  Microelectronics and Solid-state Electronics, University of Chinese Academy of Sciences;

M.S. 2010 Optics, Chongqing Normal University;

B.S. 2006 Physics, Qingdao University; 
Selected Publication:
(1) Chen, Fu; Hao, Ronghui; Yu, Guohao*; Zhang, Xiaodong*; Song, Liang; Wang, Jinyan; Cai, Yong; Zhang, Baoshun*; Enhancement-mode n-GaN gate p-channel heterostructure field effect transistors based on GaN/AlGaN 2D hole gas , Applied Physics Letters, 2019, 115(11): 0-112103.  

(2) Sun, Chi; Hao, Ronghui; Xu, Ning; He, Tao; Shi, Fengfeng; Yu, Guohao*; Song, Liang*; Huang, Zengli; Huang, Rong; Zhao, Yanfei; Wang, Rongxin; Cai, Yong; Zhang, Baoshun*; Normally-off p-GaN/AlGaN/GaN high-electron-mobility transistors using oxygen plasma treatment , Applied Physics Express, 2019, 12( 5): 0-051001.

(3) Xu, Ning; Hao, Ronghui; Chen, Fu; Zhang, Xiaodong; Zhang, Hui; Zhang, Peipei; Ding, Xiaoyu; Song, Liang; Yu, Guohao*; Cheng, Kai; Cai, Yong*; Zhang, Baoshun*; Gate leakage mechanisms in normally off p-GaN/AlGaN/GaN high electron mobility transistors , Applied Physics Letters, 2018, 113(15): 0-152104.

(4) Hao, Ronghui; Xu, Ning; Yu, Guohao*; Song, Liang; Chen, Fu; Zhao, Jie; Deng, Xuguang; Li, Xiang; Cheng, Kai; Fu, Kai*; Cai, Yong; Zhang, Xinping; Zhang, Baoshun*; Studies on Fabrication and Reliability of GaN High-Resistivity-Cap-Layer HEMT , IEEE Transactions on Electron Devices, 2018, 65(4): 1314-1320.

(5) Tang Wen-Xin; Hao Rong-Hui; Chen Fu; Yu Guo-Hao*; Zhang Bao-Shun*; p-GaN hybrid anode AlGaN/GaN diode with 1000 V operation , Acta Physica Sinica, 2018 , 67(19): 0-198501.